One-time exposure and one-time development metal stripping method for three-layer adhesive of wafer with groove

• Main Authors: LIU AJUAN, HOU PENG
• Format: Patent
• Language: Chinese; English
• Published: 02.06.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a metal stripping method for one-time exposure and one-time development of three-layer glue of a wafer with a groove, which comprises the following steps of: sequentially spin-coating or spraying a first layer of photosensitive photoresist, a non-photosensitive photoresist and another layer of photosensitive photoresist on the surface of the wafer in the groove, carrying out one-time exposure by selecting a photoetching plate, and carrying out one-time development on the photoresist, and sequentially carrying out primary developing, metal sputtering, ultrasonic soaking and stripping. After photoetching development, the groove photoresist can be completely cleaned, the transverse length of the chamfer of the outer platform of the groove can reach about 1.1-2.3 microns, no metal adhesion at the chamfer is met during subsequent metal sputtering, the stripping requirement can be met, and the effects that stripping is easy and no residual metal exists on the edge of a pattern are achieved.