Ring gate nanosheet field effect transistor and preparation method

• Main Authors: BENISTANT. FRANCIS. LIONEL, XU JUNHAO, HOU CHAOZHAO
• Format: Patent
• Language: Chinese; English
• Published: 30.05.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a ring gate nanosheet field effect transistor (100) and a preparation method. The nanosheet field effect transistor (100) comprises a substrate (10) and a semiconductor bulge (11) arranged on the surface of the substrate (10), the insulating layers (12) are formed on the two sides of the semiconductor protrusions (11) and cover the surface of the substrate (10), and the height of the surfaces of the insulating layers (12) is smaller than that of the semiconductor protrusions (11); the plurality of nanosheets (13) are formed above the semiconductor bumps (11) at intervals; by adopting the structure of the nanosheet field effect transistor (100), the leakage current of the nanosheet field effect transistor (100) can be reduced, and the switching speed of the nanosheet field effect transistor (100) can be improved. 一种环栅纳米片场效应晶体管(100)和制备方法，该纳米片场效应晶体管(100)包括：衬底(10)，设置于所述衬底(10)表面的半导体凸起(11)；形成于所述半导体凸起(11)的两侧、并覆盖所述衬底(10)表面的绝缘层(12)，所述绝缘层(12)的表面的高度小于所述半导体凸起(11)的高度；间隔形成于所述半导体凸起(11)的上方的多个纳米片(13)；采