Manufacturing method of semiconductor structure and semiconductor structure

• Main Authors: PING YANLEI, LUO JIE, MENG JINGHENG
• Format: Patent
• Language: Chinese; English
• Published: 30.05.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a manufacturing method of a semiconductor structure and the semiconductor structure, and the method comprises the steps: forming a substrate which comprises an active region; forming an oxygen-free isolation layer on the substrate, wherein the oxygen-free isolation layer covers at least part of the active region; and forming an interlayer dielectric layer on the oxygen-free isolation layer, wherein the oxygen-free isolation layer is used for separating the active region from the interlayer dielectric layer. The oxygen-free isolation layer is arranged to cover at least part of the surface of the active region before the interlayer dielectric layer is formed, and when the interlayer dielectric layer is subsequently formed, oxygen and hydrogen generated in the forming process cannot permeate into the active region under the isolation effect of the oxygen-free isolation layer, so that oxygen vacancies are prevented from being formed in the active region, and the service life of the active r