Monocrystal graphene film and preparation method and application thereof

• Main Authors: WANG XUDONG, WANG GANG, RA GUINA, ZHANG BAOXUN, LI JIONGLI
• Format: Patent
• Language: Chinese; English
• Published: 23.05.2023
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention relates to a single-crystal graphene film and a preparation method and application thereof, and belongs to the technical field of graphene material preparation. The preparation method of the single crystal graphene film comprises the following steps that a copper foil and a matrix metal foil are attached, and the melting point of the matrix metal foil is higher than that of the copper foil; the copper foil and the matrix metal foil which are attached to each other are heated to the melting temperature of the copper foil in a protective atmosphere; carrying out roll-to-roll single crystal graphene film growth on the surface of the molten copper foil through chemical vapor deposition under the condition of the melting temperature; or after the copper foil and the matrix metal foil which are attached to each other are annealed under the melting temperature condition, roll-to-roll single crystal graphene film growth is carried out on the surface of the annealed copper foil through chemical vapor dep