Light emitting diode and light emitting device

• Main Authors: HU PENGJIE, ZHOU LIPING, LIU JIAYU, KE WEIFAN, WU QIAOTIAN, PENG YUREN, LIU SHENGNAN, KWAK HWAN SO
• Format: Patent
• Language: Chinese; English
• Published: 16.05.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to the technical field of semiconductor manufacturing, in particular to a light-emitting diode, and an epitaxial structure of the light-emitting diode comprises a first-type semiconductor layer, an active layer and a second-type semiconductor layer, the upper surface and the side wall of the first bonding pad electrode are coated with the first metal coating layer, the first metal coating layer is provided with the protrusion at the bottom of the side wall of the first bonding pad electrode, and the protrusion is located below the insulating layer, so that the metal coating layer can completely coat the bonding pad electrode and can protect the edge of the bottom of the bonding pad electrode; and the active material in the pad electrode below the insulating layer is prevented from being contacted with the external environment after the insulating layer falls off, so that the reliability of the light-emitting diode is improved. 本发明涉及半导体制造技术领域，特别涉及一种发光二极管，其外延结构包括第一类型半导体层、有源层和第二类型半导体层；通过在第一