SYSTEM AND METHOD FOR REDUCING RESIST MODEL PREDICTION ERROR

• Main Authors: RIO DAVID M, WUISTER SANDER FREDERIK, KOOYMAN MAARTEN
• Format: Patent
• Language: Chinese; English
• Published: 16.05.2023
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CALCULATING; CINEMATOGRAPHY; COMPUTING; COUNTING; ELECTRIC DIGITAL DATA PROCESSING; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; MEASURING; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS; MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; TESTING

A method for calibrating a resist model is described herein. The method comprises the steps of: generating a modeled resist profile of the resist structure based on a simulated spatial image of the resist structure and parameters of the resist model; and predicting a measured profile of the resist structure from the modeled resist profile based on information of the actual resist structure obtained by the metrology device. The method includes adjusting a parameter of the resist model based on a comparison of the predicted metrology profile to an actual metrology profile of the actual resist structure obtained by the metrology device. 本文描述了一种用于校准抗蚀剂模型的方法。该方法包括以下步骤：基于抗蚀剂结构的模拟空间图像和抗蚀剂模型的参数来产生抗蚀剂结构的模型化抗蚀剂轮廓；以及基于由量测装置获得的实际抗蚀剂结构的信息，根据模型化抗蚀剂轮廓来预测抗蚀剂结构的量测轮廓。该方法包括：基于所预测的量测轮廓与由量测装置获得的实际抗蚀剂结构的实际量测轮廓的对比来调整抗蚀剂模型的参数。