Graph modification method for nanoimprint

• Main Authors: YAN SHIBO, WANG GANG, DING JIANFENG, YAO ZHIYAN, PAN XIAOZHONG
• Format: Patent
• Language: Chinese; English
• Published: 16.05.2023
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS

The invention discloses a nanoimprint pattern modification method, and relates to the technical field of sapphire patterned substrates. The treatment effect is improved; comprising the following steps: first-step etching: scanning and etching, using oxygen, removing nanoimprint technology residues to obtain a bottom film, and reducing the top width of a nanoimprint pattern; second-step etching: main etching is carried out, the selection ratio is increased, and enough height and width are accumulated; 3, etching, over-etching, modifying the pattern morphology, improving the radian of the side wall of the pattern, and removing wrinkles; the residual condition of the bottom film and the top width of the nanoimprint pattern are determined through SEM measurement, and the top width of the nanoimprint pattern is 0.2-0.5 [mu] m smaller than the bottom width when the first step of etching is finished. According to the graph modification method provided by the invention, the specific modes of scanning etching, main et