Graph modification method for nanoimprint

The invention discloses a nanoimprint pattern modification method, and relates to the technical field of sapphire patterned substrates. The treatment effect is improved; comprising the following steps: first-step etching: scanning and etching, using oxygen, removing nanoimprint technology residues t...

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Bibliographic Details
Main Authors YAN SHIBO, WANG GANG, DING JIANFENG, YAO ZHIYAN, PAN XIAOZHONG
Format Patent
LanguageChinese
English
Published 16.05.2023
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:The invention discloses a nanoimprint pattern modification method, and relates to the technical field of sapphire patterned substrates. The treatment effect is improved; comprising the following steps: first-step etching: scanning and etching, using oxygen, removing nanoimprint technology residues to obtain a bottom film, and reducing the top width of a nanoimprint pattern; second-step etching: main etching is carried out, the selection ratio is increased, and enough height and width are accumulated; 3, etching, over-etching, modifying the pattern morphology, improving the radian of the side wall of the pattern, and removing wrinkles; the residual condition of the bottom film and the top width of the nanoimprint pattern are determined through SEM measurement, and the top width of the nanoimprint pattern is 0.2-0.5 [mu] m smaller than the bottom width when the first step of etching is finished. According to the graph modification method provided by the invention, the specific modes of scanning etching, main et
Bibliography:Application Number: CN202211596560