Transistor and method for manufacturing transistor

• Main Author: KIM HYUNG-JOON
• Format: Patent
• Language: Chinese; English
• Published: 05.05.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a transistor and a manufacturing method of the transistor. A transistor according to an embodiment includes: a semiconductor layer disposed on a substrate; a gate electrode overlapping the semiconductor layer; and a source electrode and a drain electrode electrically connecte...