Transistor and method for manufacturing transistor

• Main Author: KIM HYUNG-JOON
• Format: Patent
• Language: Chinese; English
• Published: 05.05.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a transistor and a manufacturing method of the transistor. A transistor according to an embodiment includes: a semiconductor layer disposed on a substrate; a gate electrode overlapping the semiconductor layer; and a source electrode and a drain electrode electrically connected to the semiconductor layer, the semiconductor layer including a second substance doped in a first substance including a compound represented by chemical formula XYa, X being one of Mo, W, Zr, and Re, Y being one of S, Se, and Te, a being a natural number of 1 or more, and n being an integer of 1 or more. The second substance contains at least any one of W, Hf, Ta, Ti, Pt, Ni, Ga, and Zr, and the second substance contains an element different from the first substance. 本发明公开一种晶体管以及晶体管的制造方法。根据一实施例的晶体管包括：半导体层，配置于基板上；栅极电极，与所述半导体层重叠；源极电极以及漏极电极，与所述半导体层电连接，所述半导体层包含掺杂在第一物质中的第二物质，所述第一物质包含以化学式XYa表示的化合物，所述X是Mo、W、Zr以及Re中的一种，所述Y是S、Se以及Te中的一种，所述a是1以上的自然数，所述第二物质包含W、Hf、Ta、Ti、Pt、Ni、Ga以及Zr中的至少任一种，所述第二物质包含与所述第一物质不同的元素。