Infrared light device

• Main Authors: MOROHARA OSAMU, FUJITA HIROMI, YASUDA HIROKI
• Format: Patent
• Language: Chinese; English
• Published: 02.05.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Provided is a high-performance infrared light device provided with a reflective layer structure that can be widely used in the mid-infrared region. The infrared light device is provided with light reception and emission characteristics having a peak at a center wavelength [lambda], and is provided with a semiconductor substrate and a thin film laminated part. The thin film laminated part has a first reflecting layer formed on the semiconductor substrate, a lower semiconductor layer having a first conductivity type, a light receiving and emitting layer, an upper semiconductor layer having a second conductivity type, and a second reflecting layer in this order, and the first reflecting layer includes a plurality of layers having different impurity concentrations and containing AlGaInAsSb (0 < = Al + Ga < = 0.5, 0 < = As < = 1.0) as a constituent material; the center wavelength lambda is 2.5 [mu] m or more at room temperature. 本发明提供一种高性能的红外线光设备，其具备能够在中红外区域广泛利用的反射层结构。红外线光设备具备在中心波长λ具有峰的光接收和发射特性，所述红外线光设备具备半导体基板和薄膜层