Transistor with wrap-around extrinsic base

• Main Authors: STEIN KENNETH J, HOLT JEFFREY R, ZHANG YONGFU, CAI XINSHU, PEKARIK JOHN J, JAIN VINAY, ZHANG JIANXING, LIU QIZHI, TAN SHYUE SENG
• Format: Patent
• Language: Chinese; English
• Published: 28.04.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present disclosure relates to semiconductor structures, and more particularly, to transistors with wrap-around extrinsic bases and methods of manufacture. The structure comprises a substrate; the collector region is positioned in the substrate; an emitter region over the substrate and comprising a monocrystalline silicon-based material; an inner base underlying the emitter region and including a semiconductor material; and an outer base surrounding the emitter and over the inner base. 本公开涉及半导体结构，更具体地说，涉及具有环绕式外基极的晶体管和制造方法。该结构包括：衬底；集电极区，其位于衬底内；发射极区，其位于衬底上方并且包括基于单晶硅的材料；内基极，其位于发射极区下方并且包括半导体材料；以及外基极，其围绕发射极并且位于内基极上方。