Electrode manufacturing method, electrode and semiconductor device
The invention provides an electrode manufacturing method, an electrode and a semiconductor device, and belongs to the field of semiconductor devices.The method comprises the steps that an electrode layer with the preset thickness is sputtered on the surface of a silicon substrate; exposure parameter...
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Main Authors | , , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
28.04.2023
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Subjects | |
Online Access | Get full text |
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Summary: | The invention provides an electrode manufacturing method, an electrode and a semiconductor device, and belongs to the field of semiconductor devices.The method comprises the steps that an electrode layer with the preset thickness is sputtered on the surface of a silicon substrate; exposure parameters of a photoetching machine are adjusted, a photoresist pattern with the side wall of a slope structure is prepared on the surface of the electrode layer through the adjusted photoetching machine, and light emitted by the adjusted photoetching machine has a diffraction effect in the preparation process of photoresist; and according to the photoresist pattern and a preset etching process parameter adjustment scheme, etching the electrode layer through an etching machine to obtain an electrode pattern of which the side wall is of a slope structure. According to the method, the photoresist pattern with the side wall in the slope structure is prepared by utilizing the diffraction effect of light and adjusting the expos |
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Bibliography: | Application Number: CN202310320076 |