Electrode manufacturing method, electrode and semiconductor device

• Main Authors: NI YE, CHEN XIAOYANG, YU HAIYANG, YAO GUANGQIANG, SUN ZHIGUO, MENG TENGFEI, WANG YONGAN
• Format: Patent
• Language: Chinese; English
• Published: 28.04.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides an electrode manufacturing method, an electrode and a semiconductor device, and belongs to the field of semiconductor devices.The method comprises the steps that an electrode layer with the preset thickness is sputtered on the surface of a silicon substrate; exposure parameters of a photoetching machine are adjusted, a photoresist pattern with the side wall of a slope structure is prepared on the surface of the electrode layer through the adjusted photoetching machine, and light emitted by the adjusted photoetching machine has a diffraction effect in the preparation process of photoresist; and according to the photoresist pattern and a preset etching process parameter adjustment scheme, etching the electrode layer through an etching machine to obtain an electrode pattern of which the side wall is of a slope structure. According to the method, the photoresist pattern with the side wall in the slope structure is prepared by utilizing the diffraction effect of light and adjusting the expos