Semiconductor structure and forming method thereof

• Main Authors: SU BO, OH HAN-SU, ZHENG CHUNSHENG, ZHENG ERHU, ZHANG HAIYANG
• Format: Patent
• Language: Chinese; English
• Published: 21.04.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a semiconductor structure and a forming method thereof. The method comprises the following steps: providing a substrate, forming a gate structure on the substrate, forming a pseudo side wall on the side wall of the gate structure, forming a contact hole etching stop layer on the side wall of the pseudo side wall, and forming a source-drain doped region in the substrate at two sides of the gate structure; forming a sacrificial dielectric layer above the source-drain doped region and the top of the gate structure; forming a source-drain plug which penetrates through the sacrificial dielectric layer above the top of the source-drain doped region and is in contact with the source-drain doped region; etching the sacrificial dielectric layer until the tops of the pseudo side walls are exposed; after the tops of the pseudo side walls are exposed, the pseudo side walls are removed, and gaps are formed between the contact hole etching stop layers and the side walls of the gate structures; a top