Ferroelectric memory device and method of manufacturing same

• Main Authors: YOON SEONG-HYUN, KIM DAE-HYUN
• Format: Patent
• Language: Chinese; English
• Published: 21.04.2023
• Subjects: ELECTRICITY; INFORMATION STORAGE; PHYSICS; STATIC STORES

The invention relates to a ferroelectric memory device and a manufacturing method thereof. The ferroelectric memory device includes interlayer insulating layers and gate lines alternately stacked, a data storage layer vertically passing through the interlayer insulating layers and the gate lines and having a cylindrical shape, and a channel layer formed in a region surrounded by the data storage layer. The data storage layer includes a first ferroelectric layer adjoining the channel layer, a second ferroelectric layer adjoining the interlayer insulating layer and the gate line, and an interface layer formed between the first ferroelectric layer and the second ferroelectric layer. 本公开涉及铁电存储器装置及其制造方法。铁电存储器装置包括交替地层叠的层间绝缘层和栅极线、垂直穿过层间绝缘层和栅极线并且具有圆柱形形状的数据存储层以及形成在由数据存储层围绕的区域中的沟道层。数据存储层包括邻接沟道层的第一铁电层、邻接层间绝缘层和栅极线的第二铁电层以及形成在第一铁电层与第二铁电层之间的界面层。