Preparation method of indium gallium oxide nano material

• Main Authors: FU TAO, XIAO GONGLI, WANG-YANG PEIHUA, CHEN YONGHE, LI QI, LIAO QING, CHEN ZANHUI, PENG YING, SUN TANGYOU, ZHANG FABI, SHOU MEIHUA, WU YANG, ZHOU JUAN, LIU XINGPENG, LI HAI'OU
• Format: Patent
• Language: Chinese; English
• Published: 18.04.2023
• Subjects: CHEMISTRY; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F; INORGANIC CHEMISTRY; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; METALLURGY; NANOTECHNOLOGY; PERFORMING OPERATIONS; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; TRANSPORTING

According to the preparation method of the indium gallium oxide nanometer material, the indium gallium oxide nanometer wire with excellent performance can be prepared through the method, and the indium gallium oxide nanometer wire can be used as a material of a solar blind wave band detector. According to the preparation method, metal Ga and metal In are used as reaction raw materials to prepare the indium gallium oxide nano material through a chemical vapor deposition method, the temperature required by reaction is reduced, so that the manufacturing cost is reduced, the prepared indium gallium oxide nano material is smooth in surface and uniform in thickness, and the preparation method is simple and high in repeatability. 本申请提供一种铟镓氧化物纳米材料的制备方法，通过该方法可制备出性能优异的铟镓氧化物纳米线，可作为日盲波段探测器的材料。该制备方法使用金属Ga和金属In作为反应原料通过化学气相沉积法制备铟镓氧化物纳米材料，降低了反应所需温度，因而降低了制造成本，且制备出的铟镓氧化物纳米材料表面光滑，粗细均匀，且本申请的制备方法简单，可重复性强。