Trench field effect transistor and preparation method thereof

• Main Authors: XIE ZIXIANG, LIAO YONGBO, LI CHUNYAN
• Format: Patent
• Language: Chinese; English
• Published: 11.04.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The embodiment of the invention provides a trench field effect transistor and a preparation method thereof. The trench field effect transistor comprises a first semiconductor layer of a first conduction type; the upper surface of the first semiconductor layer of the first conductive type is provided with a groove; a second semiconductor layer of a second conductivity type embedded in the bottom of the trench, and two fourth semiconductor layers of the second conductivity type on the first semiconductor layer of the first conductivity type on the left and right outer sides of the trench; two third semiconductor layers of the first conductivity type respectively embedded in the upper surfaces of the two second semiconductor layers of the second conductivity type, and two fifth semiconductor layers of the first conductivity type respectively embedded in the upper surfaces of the two fourth semiconductor layers of the second conductivity type; and the two grids are respectively positioned on the left inner side a