Semiconductor device

• Main Authors: LEE KONG-SOO, CHOI WON-HEE, SHIN DONG SUK, JANG SUNG-WOOK, KUH BONG-JIN
• Format: Patent
• Language: Chinese; English
• Published: 11.04.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device is provided. A semiconductor device includes: a first active pattern spaced apart from a substrate and extending in a first direction; a second active pattern farther from the substrate than the first active pattern and extending in the first direction; a gate structure on the substrate, the gate structure extending in a second direction intersecting the first direction, and penetrating the first active pattern and the second active pattern; a first source/drain region on at least one side surface of the gate structure and connected to the first active pattern; a second source/drain region on at least one side surface of the gate structure and connected to the second active pattern; and a buffer layer between the substrate and the first active pattern, the buffer layer including germanium. 提供了一种半导体器件。一种半导体器件，包括：第一有源图案，与衬底间隔开并沿第一方向延伸；第二有源图案，比第一有源图案更远离衬底并沿第一方向延伸；栅极结构，在衬底上，该栅极结构沿与第一方向相交的第二方向延伸，并穿透第一有源图案和第二有源图案；第一源/漏区，在栅极结构的至少一个侧表面上并连接到第一有源图案；第二源/漏区，在栅极结构的至少一个侧表面上并连接到第二有源图案；以及缓冲层，在衬底和第一有源图案