Using non-isolated cells as drain-side select gates for sub-blocks in memory devices

• Main Author: YAP ALBERT S
• Format: Patent
• Language: Chinese; English
• Published: 11.04.2023
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

The invention relates to the use of non-isolated cells as drain-side select gates for sub-blocks in memory devices. Control logic in a memory device receives a request to program data to a block of a memory array of the memory device, the block including a plurality of sub-blocks, and identifies a first sub-block of the plurality of sub-blocks to be programmed with at least a portion of the data. The control logic further causes a plurality of control signals to be applied to a plurality of logic select gate layers positioned at a drain side of the block to activate the first sub-block, and cause a program signal to be applied to a selected word line of the block to program at least the portion of the data to memory cells in the first sub-block and associated with the selected word line. 本公开涉及使用非隔离单元作为用于存储器装置中的子块的漏极侧选择栅极。存储器装置中的控制逻辑接收将数据编程到所述存储器装置的存储器阵列的块的请求，所述块包括多个子块，且识别待用所述数据的至少一部分编程的所述多个子块中的第一子块。所述控制逻辑进一步致使将多个控制信号施加到定位在所述块的漏极侧处的多个逻辑选择栅极层以激活所述第一子块，且致使将编程信号施加到所述块的所选字线以将所述数据的至少所述部分编程到在所述第一子块中且与所述所选字线相关联的存储器单元