METHOD OF MANUFACTURING CAPACITOR AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

• Main Authors: SHIN YU-KYUNG, CHO CHUL-JIN, KIM HYUN-JOON, JUNG CHANG-HWA, SEO JONG-BOM
• Format: Patent
• Language: Chinese; English
• Published: 07.04.2023
• Subjects: ELECTRICITY

A method of manufacturing a capacitor and a method of manufacturing a semiconductor device are provided. The method of manufacturing a capacitor includes forming a lower electrode on a semiconductor substrate in a reaction space. A homogeneous oxide layer is formed on the lower electrode. A dielectric layer is formed on the homogeneous oxide layer. An upper electrode is formed on the dielectric layer. The step of forming the homogeneous oxide layer includes performing a homogeneous oxide layer forming cycle at least once. The homogeneous oxide layer formation cycle includes supplying an oxidant, purging the oxidant, and pumping out the reaction space. 提供了制造电容器的方法和制造半导体装置的方法。所述制造电容器的方法包括：在反应空间中在半导体基底上形成下电极。在下电极上形成均质氧化物层。在均质氧化物层上形成介电层。在介电层上形成上电极。均质氧化物层的形成步骤包括将均质氧化物层形成循环执行至少一次。均质氧化物层形成循环包括供应氧化剂、清除氧化剂和泵出反应空间。