Preparation method of planar Schottky diode terahertz detector chip

• Main Authors: WANG HUABING, JIA XIAOQING, KANG LIN, WANG WOHU, ZHAO QINGYUAN, TU XUECOU, CHEN JIAN, WU QIANGQIANG, ZHANG LEBAO, YE ZIYAO, WU PEIHENG
• Format: Patent
• Language: Chinese; English
• Published: 07.04.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a preparation method of a planar Schottky diode terahertz detector chip, a passivation layer and an epitaxial layer are etched in sequence, after the etching process is completed, an electron beam is adopted to evaporate and deposit a gold film to manufacture ohmic contact, and the etching of the epitaxial layer is realized through a wet etching process; the passivation layer is etched, after the etching process is completed, electron beam evaporation is adopted to deposit a gold film to manufacture the Schottky contact, and etching of the passivation layer is achieved through the etching process combining a dry method and a wet method; preparing a metal microbridge and an electrode of the Schottky diode, leading out a cathode of the planar Schottky diode through an ohmic contact growing on the buffer layer, and leading out an anode of the planar Schottky diode through an air microbridge in contact with the Schottky diode; and the passivation layer, the epitaxial layer, the buffer layer