GaN-based HEMT and preparation method and application thereof

• Main Authors: LI GUOQIANG, WU NENGTAO, LUO LING
• Format: Patent
• Language: Chinese; English
• Published: 07.04.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a GaN-based HEMT (High Electron Mobility Transistor) and a preparation method and application thereof. The GaN-based HEMT comprises a substrate, a GaN buffer layer, a GaN channel layer, an AlGaN barrier layer and a passivation layer which are sequentially stacked, and further comprises a source electrode, a grid electrode, a drain electrode and a GaN cap layer, and at least one of the source electrode, the grid electrode and the drain electrode is provided with a field plate. The preparation method of the GaN-based HEMT comprises the following steps: 1) sequentially growing a GaN buffer layer, a GaN channel layer, an AlGaN barrier layer and a GaN cap layer on a substrate in an epitaxial manner; 2) depositing a passivation layer; 3) depositing a source electrode and a drain electrode; 4) depositing a grid electrode; and 5) depositing a field plate. The GaN-based HEMT has the advantages of large breakdown voltage, high stability, high reliability and the like, and the preparation method