GaN-based HEMT and preparation method and application thereof

The invention discloses a GaN-based HEMT (High Electron Mobility Transistor) and a preparation method and application thereof. The GaN-based HEMT comprises a substrate, a GaN buffer layer, a GaN channel layer, an AlGaN barrier layer and a passivation layer which are sequentially stacked, and further...

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Bibliographic Details
Main Authors LI GUOQIANG, WU NENGTAO, LUO LING
Format Patent
LanguageChinese
English
Published 07.04.2023
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Summary:The invention discloses a GaN-based HEMT (High Electron Mobility Transistor) and a preparation method and application thereof. The GaN-based HEMT comprises a substrate, a GaN buffer layer, a GaN channel layer, an AlGaN barrier layer and a passivation layer which are sequentially stacked, and further comprises a source electrode, a grid electrode, a drain electrode and a GaN cap layer, and at least one of the source electrode, the grid electrode and the drain electrode is provided with a field plate. The preparation method of the GaN-based HEMT comprises the following steps: 1) sequentially growing a GaN buffer layer, a GaN channel layer, an AlGaN barrier layer and a GaN cap layer on a substrate in an epitaxial manner; 2) depositing a passivation layer; 3) depositing a source electrode and a drain electrode; 4) depositing a grid electrode; and 5) depositing a field plate. The GaN-based HEMT has the advantages of large breakdown voltage, high stability, high reliability and the like, and the preparation method
Bibliography:Application Number: CN202211554953