Multi-layer multi-functional spacer stack

• Main Authors: BOUCHET GREGOIRE, A. C. H. WEI
• Format: Patent
• Language: Chinese; English
• Published: 07.04.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention relates to a multi-layer multi-function spacer stack. Techniques for forming a semiconductor device having a multi-layer spacer structure are provided. In an example, a semiconductor device includes a semiconductor region extending between a source region and a drain region and a gate...