Glass suitable for optoelectronic device and preparation method thereof
The invention discloses glass suitable for a photoelectronic device. The glass is prepared from the following components in percentage by mole: 63-70% of SiO2, 20-30% of PbO, 2-8% of MgO, 0-5% of Cs2O and 0-5% of BaO, wherein the sum of the molar percentages of PbO and SiO2 is greater than 90%; the...
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Main Authors | , , , , , , , , , , |
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Format | Patent |
Language | Chinese English |
Published |
07.04.2023
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Subjects | |
Online Access | Get full text |
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Summary: | The invention discloses glass suitable for a photoelectronic device. The glass is prepared from the following components in percentage by mole: 63-70% of SiO2, 20-30% of PbO, 2-8% of MgO, 0-5% of Cs2O and 0-5% of BaO, wherein the sum of the molar percentages of PbO and SiO2 is greater than 90%; the contents of Cs2O and BaO are not 0 at the same time; and the components do not contain Li2O, Na2O, K2O and Rb2O. The glass provided by the invention has relatively low softening temperature and relatively high secondary electron yield.
本发明公开了一种适用于光电子器件的玻璃,由以下摩尔百分数的组分组成:SiO263-70%,PbO 20-30%,MgO 2-8%,Cs2O 0-5%,BaO 0-5%;其中,PbO和SiO2的摩尔百分数之和大于90%;Cs2O和BaO的含量不同时为0;组分中不含有Li2O、Na2O、K2O和Rb2O。本发明提供的玻璃具有较低的软化温度和较高的二次电子产额。 |
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Bibliography: | Application Number: CN202211434280 |