Semiconductor device and forming method thereof
The invention discloses a semiconductor device and a forming method thereof, and the method comprises the steps: providing a substrate which comprises a device region and a mark region; forming a plurality of first alignment mark structures on the surface of the mark area; performing first patternin...
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Main Authors | , , , |
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Format | Patent |
Language | Chinese English |
Published |
04.04.2023
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Subjects | |
Online Access | Get full text |
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Summary: | The invention discloses a semiconductor device and a forming method thereof, and the method comprises the steps: providing a substrate which comprises a device region and a mark region; forming a plurality of first alignment mark structures on the surface of the mark area; performing first patterning by taking the first alignment mark structure as a reference, and forming a first device structure in the device region; and performing second patterning by taking the first alignment mark structure as a reference, and forming a second device structure in the device region. Therefore, the whole technological process is simplified, low-frequency noise is reduced, and the alignment accuracy of photoetching is improved.
半导体器件及其形成方法,其中一种半导体器件形成方法,包括:提供衬底,所述衬底包括器件区和标记区;在所述标记区表面形成若干第一对准标记结构;以所述第一对准标记结构为基准进行第一图形化,在所述器件区内形成第一器件结构;以所述第一对准标记结构为基准进行第二图形化,在所述器件区内形成第二器件结构。从而,简化了整体工艺流程,减少产生低频噪声,提高了光刻的对准准确度。 |
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Bibliography: | Application Number: CN202110976030 |