Ion implanter system equipment of bent rear scanning electrode and ion implantation method

• Main Authors: TIEGER DANIEL, SINCLAIR FRANK, LINDBERG ROBERT, BELL EDWARD W
• Format: Patent
• Language: Chinese; English
• Published: 04.04.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY

An ion implanter system device and an ion implantation method, the ion implanter system device comprising: an ion beam generator for generating an ion beam; the scanning system is used for receiving the ion beam and generating a scanned beam; and an electrode receiving the scanned beam. At least a portion of the electrode is perpendicular to a propagation direction of the scanned beam. The portion of the electrode perpendicular to the propagation direction of the scanned beam may have a curved shape. By using a post-scan electrode having a shape (e.g., a curved shape) perpendicular to the fan beam envelope propagation direction, refractive displacement of an apparent scan origin relative to the scan origin can be advantageously avoided. The use of post-scan electrodes having a curved shape or an arc shape enables the use of significantly higher voltages on the scan plate and post-scan electrodes than those used in conventional scanning systems. 一种离子植入机系统设备及离子植入方法，所述离子植入机系统设备包括离子束产生器，产生离子束；扫描系统，接收所述离子束并产生经扫描束；