Low EMI groove Schottky diode

The invention discloses a low EMI trench Schottky diode, which comprises an anode (101), metal and Schottky contact with an epitaxial layer (202), a polycrystalline silicon region (203) is arranged in the epitaxial layer (202), part of the polycrystalline silicon region (203) is in contact with the...

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Bibliographic Details
Main Authors XIE GANG, HU DAN, SHAN YADONG
Format Patent
LanguageChinese
English
Published 31.03.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention discloses a low EMI trench Schottky diode, which comprises an anode (101), metal and Schottky contact with an epitaxial layer (202), a polycrystalline silicon region (203) is arranged in the epitaxial layer (202), part of the polycrystalline silicon region (203) is in contact with the anode (101), the anode (101) is isolated from the polycrystalline silicon (203) in an active region through a dielectric layer (302), and the dielectric layer (302) is arranged between the anode (101) and the polycrystalline silicon (203). Wherein the active region is larger than the partial region; the epitaxial layer (202) is arranged between the anode (101) and the substrate layer (201), a polycrystalline silicon region (203) is arranged in the epitaxial layer (202), and the region, except for the partial region in contact with the anode (101), of the polycrystalline silicon (203) is wrapped on the basis of the dielectric layer (302) and the gate oxide layer (301); the substrate layer (201) is arranged between t
Bibliography:Application Number: CN202211356275