Etching method and etching apparatus
The present disclosure relates to an etching method and an etching apparatus to improve vertical processability of a pattern formed by etching. The etching method includes a step a), a step b), a step c), a step d), and a step e). Step a) provides a substrate having a silicon-containing film that do...
Saved in:
Main Authors | , |
---|---|
Format | Patent |
Language | Chinese English |
Published |
31.03.2023
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | The present disclosure relates to an etching method and an etching apparatus to improve vertical processability of a pattern formed by etching. The etching method includes a step a), a step b), a step c), a step d), and a step e). Step a) provides a substrate having a silicon-containing film that does not contain oxygen and nitrogen, and a mask formed on the silicon-containing film. Step b) etching the silicon-containing film by plasma of a first processing gas containing a halogen-containing gas to form a recess. And c) forming an oxide film on the recess by plasma of a second processing gas containing an oxygen-containing gas and a gas containing carbon, hydrogen, and fluorine. And d) after the step c), further etching the silicon-containing film using the plasma of the first processing gas. Step e) repeats the steps c) and d) a preset number of times. In the etching method, the thickness of the formed oxide film is changed by changing the processing conditions of at least one of step c) and step d) in step |
---|---|
AbstractList | The present disclosure relates to an etching method and an etching apparatus to improve vertical processability of a pattern formed by etching. The etching method includes a step a), a step b), a step c), a step d), and a step e). Step a) provides a substrate having a silicon-containing film that does not contain oxygen and nitrogen, and a mask formed on the silicon-containing film. Step b) etching the silicon-containing film by plasma of a first processing gas containing a halogen-containing gas to form a recess. And c) forming an oxide film on the recess by plasma of a second processing gas containing an oxygen-containing gas and a gas containing carbon, hydrogen, and fluorine. And d) after the step c), further etching the silicon-containing film using the plasma of the first processing gas. Step e) repeats the steps c) and d) a preset number of times. In the etching method, the thickness of the formed oxide film is changed by changing the processing conditions of at least one of step c) and step d) in step |
Author | TAKINO YUSUKE TAKADA FUMIYA |
Author_xml | – fullname: TAKINO YUSUKE – fullname: TAKADA FUMIYA |
BookMark | eNrjYmDJy89L5WRQcS1JzsjMS1fITS3JyE9RSMxLUUiFCiUWFCQWJZaUFvMwsKYl5hSn8kJpbgZFN9cQZw_d1IL8-NTigsTk1LzUknhnP0NDUwsLQ1NjQ0djYtQAAOW_KHQ |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
DocumentTitleAlternate | 蚀刻方法和蚀刻装置 |
ExternalDocumentID | CN115881531A |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_CN115881531A3 |
IEDL.DBID | EVB |
IngestDate | Fri Jul 19 14:31:25 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | Chinese English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_CN115881531A3 |
Notes | Application Number: CN202211137721 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230331&DB=EPODOC&CC=CN&NR=115881531A |
ParticipantIDs | epo_espacenet_CN115881531A |
PublicationCentury | 2000 |
PublicationDate | 20230331 |
PublicationDateYYYYMMDD | 2023-03-31 |
PublicationDate_xml | – month: 03 year: 2023 text: 20230331 day: 31 |
PublicationDecade | 2020 |
PublicationYear | 2023 |
RelatedCompanies | TOKYO ELECTRON LIMITED |
RelatedCompanies_xml | – name: TOKYO ELECTRON LIMITED |
Score | 3.5934854 |
Snippet | The present disclosure relates to an etching method and an etching apparatus to improve vertical processability of a pattern formed by etching. The etching... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | Etching method and etching apparatus |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230331&DB=EPODOC&locale=&CC=CN&NR=115881531A |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQSUxMSzVNM0nVBVbmpromySkWuhYWlsA-j7mhSaKJYSKwzgJ1FH39zDxCTbwiTCOYGLJge2HA54SWgw9HBOaoZGB-LwGX1wWIQSwX8NrKYv2kTKBQvr1biK2LGrR3DGxPgzYAuTjZugb4u_g7qzk72zr7qfkF2QJdYmEBzN2GjswMrKBmNOicfdcwJ9CulALkKsVNkIEtAGhaXokQA1NVhjADpzPs5jVhBg5f6IQ3kAnNe8UiDCquJeB1jwqQS58VEvNSFFKhQokF4CO8S4tFGRTdXEOcPXSB1sXD_Rbv7IdwmbEYAwuwz58qwaBglmqcmmhskpSUDOx-pVgYJxobm6caWQBZRknA4slEkkEKtzlS-CSlGbhA4QTZVifDwFJSVJoqC6xXS5LkwAECAPiQeuI |
link.rule.ids | 230,309,786,891,25594,76904 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwY2BQSUxMSzVNM0nVBVbmpromySkWuhYWlsA-j7mhSaKJYSKwzgJ1FH39zDxCTbwiTCOYGLJge2HA54SWgw9HBOaoZGB-LwGX1wWIQSwX8NrKYv2kTKBQvr1biK2LGrR3DGxPgzYAuTjZugb4u_g7qzk72zr7qfkF2QJdYmEBzN2GjswMrObALiHonH3XMCfQrpQC5CrFTZCBLQBoWl6JEANTVYYwA6cz7OY1YQYOX-iEN5AJzXvFIgwqriXgdY8KkEufFRLzUhRSoUKJBeAjvEuLRRkU3VxDnD10gdbFw_0W7-yHcJmxGAMLsM-fKsGgYJZqnJpobJKUlAzsfqVYGCcaG5unGlkAWUZJwOLJRJJBCrc5Uvgk5Rk4PUJ8feJ9PP28pRm4QGEG2WInw8BSUlSaKgusY0uS5MCBAwDdmn3N |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Etching+method+and+etching+apparatus&rft.inventor=TAKINO+YUSUKE&rft.inventor=TAKADA+FUMIYA&rft.date=2023-03-31&rft.externalDBID=A&rft.externalDocID=CN115881531A |