Etching method and etching apparatus

• Main Authors: TAKINO YUSUKE, TAKADA FUMIYA
• Format: Patent
• Language: Chinese; English
• Published: 31.03.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present disclosure relates to an etching method and an etching apparatus to improve vertical processability of a pattern formed by etching. The etching method includes a step a), a step b), a step c), a step d), and a step e). Step a) provides a substrate having a silicon-containing film that does not contain oxygen and nitrogen, and a mask formed on the silicon-containing film. Step b) etching the silicon-containing film by plasma of a first processing gas containing a halogen-containing gas to form a recess. And c) forming an oxide film on the recess by plasma of a second processing gas containing an oxygen-containing gas and a gas containing carbon, hydrogen, and fluorine. And d) after the step c), further etching the silicon-containing film using the plasma of the first processing gas. Step e) repeats the steps c) and d) a preset number of times. In the etching method, the thickness of the formed oxide film is changed by changing the processing conditions of at least one of step c) and step d) in step