Module configuration for integrated III-nitride devices

• Main Authors: RHODES DAVID MICHAEL, YEA SEONG-HAE, WU YIFENG, PARIKH PRIMIT
• Format: Patent
• Language: Chinese; English
• Published: 28.03.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An electronic module for a half-bridge circuit includes a base substrate having an insulating layer between a first metal layer and a second metal layer. A trench formed through the first metal layer electrically isolates the first, second, and third portions of the first metal layer from each other. The high-side switch includes an enhancement mode transistor and a depletion mode transistor. The depletion mode transistor includes a III-N material structure on a conductive substrate. A drain electrode of the depletion mode transistor is connected to the first portion, a source electrode of the enhancement mode transistor is connected to the second portion, a drain electrode of the enhancement mode transistor is connected to the source electrode of the depletion mode transistor, a gate electrode of the depletion mode transistor is connected to the conductive substrate, and the conductive substrate is connected to the second portion. 一种用于半桥电路的电子模块包括具有在第一金属层和第二金属层之间的绝缘层的基底衬底。穿过第一金属层形成的沟槽将第一金属层的第一部分、第二部分和第三部分彼此电隔