METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, PROGRAM, SUBSTRATE PROCESSING APPARATUS, AND SUBSTRATE PROCESSING METHOD

The generation of particles caused by film peeling in the processing container can be suppressed. The method includes: (a) a step of loading a substrate into a processing container; (b) a step of supplying a processing gas into the processing container to form a film containing titanium and nitrogen...

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Bibliographic Details
Main Authors OGAWA ARITO, SEINO ATSURO, JODA TAKUYA
Format Patent
LanguageChinese
English
Published 28.03.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The generation of particles caused by film peeling in the processing container can be suppressed. The method includes: (a) a step of loading a substrate into a processing container; (b) a step of supplying a processing gas into the processing container to form a film containing titanium and nitrogen on the substrate; (c) a step of moving the processed substrate out of the processing container; and (d) a step of supplying a modification gas containing at least one of silicon, a metal, and a halogen into the processing container after the processed substrate has been moved out. 能够抑制由处理容器内的膜剥离引起的颗粒的产生。包括：(a)向处理容器内搬入衬底的工序；(b)进行向处理容器内供给处理气体、以在衬底上形成包含钛和氮的膜的处理的工序；(c)将处理后的衬底从处理容器内搬出的工序；和(d)向将处理后的衬底搬出后的处理容器内供给包含硅、金属或卤素中的至少任一者的改性气体的工序。
Bibliography:Application Number: CN202180046835