Light emitting diode and preparation method thereof

• Main Authors: WANG JIANGBO, CHEN-ZHANG XIAOXIONG, GONG YIPIN
• Format: Patent
• Language: Chinese; English
• Published: 14.03.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a light emitting diode and a preparation method thereof, and belongs to the technical field of semiconductors. The light-emitting diode comprises a substrate, and an n-type semiconductor layer, a composite light-emitting layer and a transparent conductive layer which are sequentially grown on the substrate, the composite light-emitting layer comprises a plurality of nanowire structures and a scattering medium, the plurality of nanowire structures extend along the growth direction and are arranged in parallel at intervals, the scattering medium is filled among the plurality of nanowire structures, and the scattering medium is a SiO2 composite Ag particle scattering medium. The light uniformizing effect can be improved. 本公开提供了一种发光二极管及其制备方法，属于半导体技术领域。该发光二极管包括衬底，以及依次生在衬底上的n型半导体层、复合发光层和透明导电层；复合发光层包括多个纳米线结构和散射介质，多个纳米线结构沿生长方向延伸，且相互平行间隔排布，散射介质填充在多个纳米线结构之间，散射介质为SiO2复合Ag粒子散射介质。本公开能够提高匀光效果。