Semiconductor device

• Main Authors: BAEK MYUNG-HYUN, PARK YOUNG-WOOK, CHAE KYO-SUK, KIM JI-HOON, KONG DONG-SIK, LEE JUN-BEOM, WE JU-HYUNG
• Format: Patent
• Language: Chinese; English
• Published: 14.03.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device and a method of manufacturing the same are disclosed. The semiconductor device may include a substrate having therein a recess extending in a first direction, a gate insulating layer in the recess, a first conductive pattern in the recess and on the gate insulating layer, and a word line cover pattern in the recess and on the first conductive pattern. The first conductive pattern may include a first material and may include a first conductive portion adjacent to the word line cover pattern and a second conductive portion adjacent to a bottom end of the recess. A maximum size of grains of the first material of the first conductive portion may be equal to or greater than a maximum size of grains of the first material of the second conductive portion. 公开了一种半导体器件和制造其的方法。该半导体器件可以包括在其中具有在第一方向上延伸的凹槽的衬底、在凹槽中的栅极绝缘层、在凹槽中并且在栅极绝缘层上的第一导电图案、以及在凹槽中并且在第一导电图案上的字线盖图案。第一导电图案可以包括第一材料，并且可以包括与字线盖图案相邻的第一导电部分和与凹槽的底端相邻的第二导电部分。第一导电部分的第一材料的晶粒的最大尺寸可以等于或大于第二导电部分的第一材料的晶粒的最大尺寸。