Semiconductor device and preparation method thereof

• Main Authors: ZHANG WENWEN, HUANG RENRUI, FANG YONGZHI
• Format: Patent
• Language: Chinese; English
• Published: 14.03.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a semiconductor device and a preparation method thereof. The method comprises the steps of forming an etching stop layer, a first dielectric layer, an auxiliary dielectric layer and a second dielectric layer which are sequentially stacked from bottom to top; the photoresist layer is used as an etching barrier layer, the second dielectric layer is patterned to obtain a first opening pattern, and the bottom of the first opening pattern is provided with a second opening pattern which exposes part of the auxiliary dielectric layer; forming a first groove penetrating through the second dielectric layer and the auxiliary dielectric layer and extending to the first dielectric layer based on the first opening pattern, and forming a second groove penetrating through the first dielectric layer from the bottom of the first groove and extending to the etching stop layer based on the second opening pattern; and forming conductive layers in the first groove and the second groove. The damascene-like m