Substrate support with multiple embedded electrodes
A method and apparatus for biasing a region of a substrate in a plasma assisted processing chamber is provided. Biasing the substrate (or a region of the substrate) increases a potential difference between the substrate and a plasma formed in the processing chamber, thereby accelerating ions from th...
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Main Authors | , , |
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Format | Patent |
Language | Chinese English |
Published |
14.03.2023
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Subjects | |
Online Access | Get full text |
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Summary: | A method and apparatus for biasing a region of a substrate in a plasma assisted processing chamber is provided. Biasing the substrate (or a region of the substrate) increases a potential difference between the substrate and a plasma formed in the processing chamber, thereby accelerating ions from the plasma toward an active surface of the substrate region. The plurality of bias electrodes herein are spatially arranged across the substrate support in a pattern that facilitates management of uniformity of processing results across the substrate.
提供了一种用于在等离子体辅助处理腔室中将基板偏压的区域的方法和设备。将基板(或基板的区域)偏压增加了在基板与处理腔室中形成的等离子体之间的电位差,从而将来自等离子体的离子加速朝向基板区域的活性表面。在本文中的多个偏压电极以有利于管理跨越基板的处理结果的均匀性的图案的方式跨越基板支撑件而空间地布置。 |
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Bibliography: | Application Number: CN202211408065 |