Silicon wafer defect detection method

• Main Authors: THE INVENTOR HAS WAIVED THE RIGHT TO BE MENTIONED, TONG JIAXI
• Format: Patent
• Language: Chinese; English
• Published: 14.03.2023
• Subjects: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MEASURING; PHYSICS; TESTING

The invention relates to a silicon wafer defect detection method. The method comprises the following steps: cutting a silicon wafer to be detected into two sub-silicon wafers to be detected; carrying out metal pollution treatment on the two to-be-detected sub-silicon wafers; and performing different heat treatments on the two to-be-detected sub-silicon wafers, and judging the defects of the to-be-detected silicon wafers according to whether the two to-be-detected sub-silicon wafers show copper pollution patterns or not. According to the method, a to-be-detected silicon wafer is cut into two to-be-detected sub-silicon wafers, the two to-be-detected sub-silicon wafers are subjected to different heat treatments, and the two to-be-detected sub-silicon wafers have different results according to the characteristics of a pv region and a pi region, so that the pv region and the pi region can be accurately judged. 本发明涉及一种硅片缺陷的检测方法，包括以下步骤：将待检测硅片切割为两片待检测子硅片；将两片待检测子硅片进行金属污染处理；将两片待检测子硅片进行不同的热处理，并根据两片待检测子硅片是否显现铜污染图案，判断待检测硅