Metal interconnection structure and manufacturing method thereof

• Main Authors: ZHANG WENWEN, HUANG RENRUI, ZHU WENMING, FANG YONGZHI, LIU QUN, GAO QINGYAO
• Format: Patent
• Language: Chinese; English
• Published: 10.03.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a metal interconnection structure and a manufacturing method thereof, and is applied to the technical field of semiconductors. Specifically, the thickness of the first buffer layer covering the surface of the dielectric layer is increased, so that the problem that the etching selection ratio of the metal layer to media such as the dielectric layer is low due to the fact that the thickness of the first buffer layer is small, and the etching efficiency of the second buffer layer, the metal layer and the first buffer layer is improved due to the over-etching problem in the previous etching process in the step-by-step etching process is solved. The problems that the thickness of the first buffer layer is too thin when the etching process of the first buffer layer is to be executed, and the dielectric layer below the first buffer layer is over-etched, so that the thickness of the residual dielectric layer does not reach the standard, and the performance of a semiconductor device and the mark