Multi-frequency ultrasonic sensor system

An ultrasound sensor system may include an ultrasound transceiver layer, a thin film transistor (TFT) layer adjacent to a first side of the ultrasound transceiver layer, a frequency splitting layer adjacent to a second side of the ultrasound transceiver layer, and a high impedance layer adjacent to...

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Bibliographic Details
Main Authors PANCHAWAGH HRISHIKESH VIJAYKUMAR, STROMAN JEFFERY L, BUCHANAN NICHOLAS IAN, LU YIPENG, DJORDJEV KOSTADIN DIMITROV
Format Patent
LanguageChinese
English
Published 07.03.2023
Subjects
CALCULATING
COMPUTING
COUNTING
PHYSICS
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Summary:An ultrasound sensor system may include an ultrasound transceiver layer, a thin film transistor (TFT) layer adjacent to a first side of the ultrasound transceiver layer, a frequency splitting layer adjacent to a second side of the ultrasound transceiver layer, and a high impedance layer adjacent to the frequency splitting layer. The frequency splitting layer may reside between the ultrasound transceiver layer and the high impedance layer. The high impedance layer may have a higher acoustic impedance than the frequency splitting layer. 一种超声传感器系统，可包括：超声收发器层、邻近于超声收发器层的第一侧的薄膜晶体管(TFT)层、邻近于超声收发器层的第二侧的频率拆分层、以及邻近于频率拆分层的高阻抗层。频率拆分层可驻留在超声收发器层与高阻抗层之间。高阻抗层可具有比频率拆分层更高的声阻抗。
Bibliography:Application Number: CN202180045643