Cavity cover and metal organic chemical vapor deposition equipment

• Main Authors: CHEN-ZHANG XIAOXIONG, XUE TAO, WANG QUN
• Format: Patent
• Language: Chinese; English
• Published: 07.03.2023
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention provides a cavity cover and metal organic chemical vapor deposition equipment, and belongs to the technical field of semiconductors. The cavity cover comprises an outer ring part, an inner ring part and a driving part. The outer ring part is provided with a plurality of outer MO source pipelines and a plurality of outer carrier pipelines; the inner ring part is located in the outer ring part, the inner ring part and the outer ring part are concentrically arranged, and the inner ring part is provided with a plurality of inner MO source pipelines and a plurality of inner carrier pipelines; the driving part is connected with the inner ring part and used for driving the inner ring part to rotate. The problem that the concentration distribution of the MO source is not uniform can be solved. 本公开提供了一种腔盖及金属有机化学气相沉积设备，属于半导体技术领域。该腔盖包括外环部、内环部和驱动部。外环部具有多个外MO源管道和多个外载体管道；内环部位于外环部内，且与外环部同心布置，内环部具有多个内MO源管道和多个内载体管道；驱动部与内环部相连，用于驱动内环部旋转。本公开能够解决MO源的浓度分布不均的问题。