Fin field effect transistor and preparation method

• Main Authors: LIONEL, BENISTET, FRANCIS, XU JUNHAO, HOU CHAOZHAO
• Format: Patent
• Language: Chinese; English
• Published: 03.02.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The embodiment of the invention provides a fin type field effect transistor and a preparation method, and the fin type field effect transistor comprises the components of a substrate which is provided with an active region and a channel region; the fin is formed on the substrate and penetrates through the active region and the channel region; wherein the width of the part, located in the channel region, of the fin is smaller than the width of the part, located in the active region, of the fin, and by adopting the structure of the fin type field effect transistor provided by the invention, the reliability of the fin type field effect transistor can be improved under the condition that the switching speed is ensured. 本申请实施例提供了一种鳍式场效应晶体管和制备方法，该鳍式场效应晶体管包括：衬底，所述衬底上形成有有源区和沟道区；鳍片，形成于所述衬底上，并贯穿所述有源区和所述沟道区；其中，所述鳍片的处于所述沟道区部分的宽度，小于所述鳍片处于所述有源区部分的宽度，采用本申请提供的鳍式场效应晶体管的结构，可以在保证开关速度的情况下提高鳍式场效应晶体管的可靠性。