Method for adjusting threshold voltage balance of long and short channels based on ion implantation process

• Main Authors: FU RUIPENG, HE DEBIAO, CHENG CHAOGE, LUO WENJIE
• Format: Patent
• Language: Chinese; English
• Published: 03.02.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a method for adjusting threshold voltage balance of long and short channels based on an ion implantation process, which comprises the following steps of: providing a substrate, forming a plurality of gate structures on the substrate, forming grooves positioned in a source region and a drain region on the substrate at two sides of the gate structures, the length of the other part of the grooves is a second length greater than the first length; doping is carried out on the substrate at the grooves, so that the channel voltage at the groove with the length being the first length is reduced, and the groove voltage at the groove with the length being the second length tends to be unchanged; and forming an epitaxial layer for filling the groove. The threshold voltage of the short-channel device is adjusted before the epitaxial layer is formed, so that the threshold voltage of the long-channel device and the threshold voltage of the short-channel device are balanced. 本发明提供一种基于离子注入工艺调整长短沟道阈值电压平