Semiconductor device

• Main Authors: SUZUKI AKIO, IKEDA TAKAYUKI, YAKUBO YUTO, MIYATA SHOKI
• Format: Patent
• Language: Chinese; English
• Published: 31.01.2023
• Subjects: BASIC ELECTRONIC CIRCUITRY; DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TOANOTHER; ELECTRICITY

A novel semiconductor device is provided. The semiconductor device includes a mixer circuit and a bias circuit. The mixer circuit includes a voltage-current conversion unit, a current switching unit, and a current-voltage conversion unit. In addition, the bias circuit includes a bias supply portion and a first transistor. The voltage-current conversion unit includes a second transistor and a third transistor. The bias supply unit has a function of outputting a bias voltage supplied to the gate of the second transistor and the gate of the third transistor. One of a source and a drain of the first transistor is electrically connected to a gate of the second transistor and a gate of the third transistor. The first transistor is turned off when the bias voltage is supplied, and the first transistor is turned on when the supply of the bias voltage is stopped. 提供一种新颖的半导体装置。该半导体装置包括混频器电路及偏置电路。混频器电路包括电压电流转换部、电流开关部及电流电压转换部。此外，偏置电路包括偏置供应部及第一晶体管。电压电流转换部包括第二晶体管及第三晶体管。偏置供应部具有输出对第二晶体管的栅极及第三晶体管的栅极供应的偏置电压的功能。第一晶体管的源极和漏极中的一个与