Preparation method of metallic transition metal chalcogenide film

• Main Authors: ZHANG XIUMEI, GU YAN, YANG GUOFENG, CHEN GUOQING, HUO XINXIA
• Format: Patent
• Language: Chinese; English
• Published: 31.01.2023
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The invention relates to a preparation method of a metallic transition metal chalcogenide film, and belongs to the technical field of nano material preparation. VB group transition metal elements (such as V, Nb or Ta) are introduced in the CVD growth process of a two-dimensional semiconducting transition metal chalcogenide binary alloy film for doping, the proportion between the VB group transition metal elements and the VIB group transition metal elements is regulated, and the two-dimensional semiconducting transition metal chalcogenide ternary alloy film which is more stable in air is generated. The preparation method can effectively solve the problem of insufficient steam of source powder caused by low saturated steam pressure of VB group transition metal oxide source powder in the preparation process of the two-dimensional metallic binary alloy film, binary film growth is changed into ternary film growth, and the characteristic of high saturated steam pressure of VIB group transition metal oxide is utiliz