Recrystallization method of crystalline material

• Main Authors: LUO JUNWEI, ZHU YUANHAO, HE LI, WEN SHUYU
• Format: Patent
• Language: Chinese; English
• Published: 13.01.2023
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The invention provides a recrystallization method of a crystal material. The recrystallization method comprises the following steps: depositing a covering layer on the surface of the crystal material; using pulse laser to irradiate the side, deposited with the covering layer, of the crystal material, so that the crystal material is heated, cooled and crystallized, and a recrystallization layer is formed on the side, close to the covering layer, of the crystal material; and etching the covering layer on the surface of the crystal material to expose the recrystallization layer. According to the method, the covering layer is pre-deposited on the surface of the crystal material, and the crystal material is annealed by using the pulse laser, so that high-quality regeneration of the crystal material is realized, and the doped atom loss problem is effectively inhibited. 本发明提供一种晶体材料的重结晶方法，包括：在晶体材料的表面沉积一层覆盖层；使用脉冲激光对所述晶体材料沉积有覆盖层的一面进行辐照，使所述晶体材料受热冷却结晶，在所述晶体材料靠近所述覆盖层的一侧形成重结晶层；刻蚀掉所述晶体材料表面的覆盖层，露出所述重结晶层。本发明通过向晶体材料表面预沉积覆盖层并使用