Capacitor structure and semiconductor memory device including same

• Main Authors: SHIN YU-KYUNG, JUNG KYOO-HO, KANG SANG-YEOL, KIM SOO-HWAN, CHOI WON-SIK, BAEK DONG-KWAN
• Format: Patent
• Language: Chinese; English
• Published: 10.01.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a capacitor structure and a semiconductor memory device including the same. The capacitor structure includes a lower electrode, an upper electrode, and a capacitor dielectric film interposed between the lower electrode and the upper electrode, in which the lower electrode includes an electrode film including a first metal element, and a doped oxide film including an oxide of the first metal element between the electrode film and the capacitor dielectric film, the doped oxide film further includes a second metal element including at least one of Group 5 to Group 11 and Group 15 metal elements, and an impurity element including at least one of silicon (Si), aluminum (Al), zirconium (Zr) and hafnium (Hf). 本发明提供一种电容器结构和包括该电容器结构的半导体存储器件。电容器结构包括下电极、上电极以及插设在下电极和上电极之间的电容器电介质膜，其中下电极包括包含第一金属元素的电极膜，以及在电极膜和电容器电介质膜之间的包含第一金属元素的氧化物的掺杂的氧化物膜，掺杂的氧化物膜进一步包括第二金属元素和杂质元素，第二金属元素包括第5族至第11族和第15族金属元素中的至少一种，杂质元素包括硅(Si)、铝(Al)、锆(Zr)和铪(Hf)中的至少一种。