Semiconductor device, transistor and method of forming semiconductor device

• Main Authors: LI XINYI, HONG ZHENGLONG, XU ZHI'AN
• Format: Patent
• Language: Chinese; English
• Published: 27.12.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Embodiments include a semiconductor device, a transistor, and a method of forming a semiconductor device, such as a nanoFET transistor including a first nanostructure. A gate dielectric is formed around the first nanostructure. A gate electrode is formed over the gate dielectric, and the gate electrode includes a first work function metal. In the gate electrode, a first metal residue is formed at an interface between the gate dielectric and the first work function metal due to a processing process performed prior to forming the first work function metal. The first metal residue has a metal element different from a metal element of the first work function metal. 实施例包括一种半导体装置、晶体管、以及形成半导体装置的方法，诸如包括第一纳米结构的纳米FET晶体管。栅极介电质在第一纳米结构周围形成。栅极电极在栅极介电质上方形成，并且栅极电极包括第一功函数金属。在栅极电极中，由于在形成第一功函数金属之前执行的处理制程，第一金属残留物在栅极介电质与第一功函数金属之间的界面处形成。第一金属残留物具有与第一功函数金属的金属元素不同的金属元素。