Bilayer metal disulfides, their synthesis and their use

• Main Authors: HARUTYUNYAN, AVETIK, LI XUFAN
• Format: Patent
• Language: Chinese; English
• Published: 20.12.2022
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; METALLURGY; NANOTECHNOLOGY; PERFORMING OPERATIONS; SEMICONDUCTOR DEVICES; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSPORTING

The present disclosure generally relates to bilayer metal dichalcogenides, methods for forming bilayer metal dichalcogenides, and the use of bilayer metal dichalcogenides in quantum electronic devices. In one aspect, an apparatus is provided. The device includes a gate electrode, a substrate disposed over at least a portion of the gate electrode, and a bottom layer including a first metal dichalcogenide disposed over at least a portion of the substrate. The apparatus also includes a top layer including a second metal dichalcogenide, the top layer disposed over at least a portion of the bottom layer, the first metal dichalcogenide and the second metal dichalcogenide being the same or different. The device also includes a source electrode and a drain electrode disposed over at least a portion of the top layer. 本公开一般涉及双层金属二硫属化物、用于形成双层金属二硫属化物的方法、以及双层金属二硫属化物在量子电子设备中的用途。在一个方面，提供了一种设备。该设备包括栅电极、设置在该栅电极的至少一部分上方的衬底、以及包括第一金属二硫属化物的底层，该底层设置在该衬底的至少一部分上方。该设备还包括顶层，该顶层包括第二金属二硫属化物，该顶层设置在该底层的至少一部分上方，该第一金属二硫属化物和该第二金属二硫属化物相同或不同。该