Strip-shaped channel flat plate coupling waveguide semiconductor optical amplifier and preparation method thereof

The invention discloses a strip-shaped channel flat coupling waveguide semiconductor optical amplifier and a preparation method thereof, and belongs to the field of semiconductor optical amplifiers. A strip-shaped channel waveguide layer with a high refractive index is coupled with an active region...

Full description

Saved in:
Bibliographic Details
Main Authors NIU CHUANNING, LI WEN, LI XUN, XI YANPING
Format Patent
LanguageChinese
English
Published 13.12.2022
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:The invention discloses a strip-shaped channel flat coupling waveguide semiconductor optical amplifier and a preparation method thereof, and belongs to the field of semiconductor optical amplifiers. A strip-shaped channel waveguide layer with a high refractive index is coupled with an active region flat plate, and the strip-shaped channel waveguide layer and the active region are separated by an N-type isolation layer made of a low refractive index material; by changing the thickness of the N-type isolation layer and the material component or thickness of the channel waveguide layer, the light field limiting factor can be changed and the size of the mode field light spot can be adjusted in a large range. The saturation power of the semiconductor optical amplifier can be remarkably improved by reducing light field limiting factors and expanding mode field light spots. 本发明公开了一种条形沟道平板耦合波导半导体光放大器及其制备方法,属于半导体光放大器领域。本发明采用具有高折射率的条形沟道波导层与有源区平板耦合,条形沟道波导层与有源区之间由低折射率材料的N型隔离层隔开,通过改变N型隔离层的厚度、沟道波导层的材料组分或厚度可以大范围地改变光场限制因子和调节
Bibliography:Application Number: CN202211120052