Self-biased split insulated gate bipolar transistor with full-groove structure

• Main Authors: LAN YIFEI, ZHANG JINPING, ZHANG BO, HUANG YUNXIANG
• Format: Patent
• Language: Chinese; English
• Published: 13.12.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention belongs to the technical field of power semiconductor devices, and relates to a self-biased split insulated gate bipolar transistor with a full-trench structure and a manufacturing method thereof. The potential of a floating P region in a transition region is led out through layout routing, and a diode and a capacitor are integrated through module packaging, so that C is connected between split gates 11-1, 11-2, 11-3, 11-4, 11-5 and 11-6 and an emitter metal 1 in series. When the device is blocked, a floating P region potential is utilized to charge a capacitor, so that a bias potential is provided for a separation gate, the separation gate also has a stable potential, the potential attracts electrons near the separation gate to accumulate to form an electron accumulation layer, the accumulation layer improves the injection efficiency of a channel, the conductance modulation effect of a drift region is further improved, and the performance of the device is improved. And the forward conduction vo